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參數(shù)資料
| 型號(hào)： | MGFC38V5964 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MGFC38V5964 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC38V5964
5.9 ~ 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
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| MGFC39V5964-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC38V5964_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5964_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET |
| MGFC38V6472 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V6472_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V6472_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET |
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