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參數(shù)資料
| 型號： | MGFC36V3436 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 87K |
| 代理商： | MGFC36V3436 |
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC36V3436
3.4 – 3.6 GHz BAND / 4W
DESCRIPTION
The MGFC36V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 – 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=3.4 – 3.6GHz
High power gain
GLP=13.5dB (TYP.) @f=3.4 – 3.6GHz
High power added efficiency
P.A.E.=32% (TYP.) @f=3.4 – 3.6GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L
APPLICATION
item 01 : 3.4 – 3.6 GHz band power amplifier
item 51 : 3.4 – 3.6 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain breakdown voltage
-15
V
VGSO
Gate to source breakdown voltage
-15
V
ID
Drain current
3.75
A
IGR
Reverse gate current
-10
mA
IGF
Forward gate current
21
mA
PT *1
Total power dissipation
25
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
3.75
A
gm
Transconductance
VDS=3V,ID=1.1A
-
1
-
S
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=10mA
-
-4.5
V
P1dB
Output power at 1dB gain compression
35
37
-
dBm
GLP
Linear Power Gain
11
13.5
-
dB
ID
Drain current
-
1.1
1.8
A
P.A.E.
Power added efficiency
-
32
-
%
IM3 *2
3rd order IM distortion
VDS=10V,ID(RF off)=1.2A
f=3.4 – 3.6GHz
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
5
6
C/W
*2 :item -51 ,2 tone test,Po=25dBm Single Carrier Level ,f=3.6GHz,delta f=5MHz
*3 :Channel-case
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4.
5
+
/-
0
.4
0.
2
GF-8
1.
6
2M
IN
(2)
12.9
+
/-
0
.2
2M
IN
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.
1
2.
6
+
/-
0
.2
R-1 .6
(3)
(2)
11.
3
0.6 +/-0.15
Unit : millimeters
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MGFC36V3436_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V3436_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V3742A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V3742A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V3742A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
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