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參數(shù)資料
| 型號(hào)： | MGF4963BL |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | K BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | MGF4963BL |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4963BL
SUPER LOW NOISE InGaAs HEMT
MITSUBISHI
(3/6)
16/Oct./2009
TYPICAL CHARACTERISTICS (Ta=25°C)
0
10
20
30
40
50
-1
-0.5
0
Gate to Source voltage, VGS(V)
D
ra
in
c
u
rr
e
n
t,
ID
(m
A
)
0
10
20
30
40
50
0
1
2
3
Drain to Source voltage, VDS(V)
D
ra
in
c
u
rr
e
n
t,
ID
(m
A
)
0.4
0.8
1.2
1.6
2.0
0
5
10
15
20
Drain Current , ID (mA)
N
oi
se
Fi
gu
re
,N
F
(d
B)
0
4
8
12
16
Asso
ci
at
ed
G
ai
n
,G
s
(d
B)
NF & Gs vs. ID
VDS=2V
VGS=-0.1V/STEP
ID vs. VDS
ID vs. VGS
Ta=25℃
VDS=2V
f=20GHz
Gs
NF
VGS=0V
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