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參數(shù)資料
| 型號(hào)： | MGF4961B |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | K BAND, Si, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | GD-31, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 109K |
| 代理商： | MGF4961B |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4961B
SUPER LOW NOISE InGaAs HEMT
MITSUBISHI
(2/4)
Feb./2007
TYPICAL CHARACTERISTICS
(Ta=25°C)
NF & Gs vs. ID
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
DRAIN CURRENT, ID (mA)
N
O
IS
E
F
IG
U
R
E
,
N
F
(d
B
)
4
6
8
10
12
14
16
A
S
O
C
IA
T
E
D
G
A
IN
,
G
s
(d
B
)
VDS=2V
f =20GHz
NF
Gs
ID vs. VGS
0
10
20
30
40
50
-1.0
-0.5
0.0
Gate to Source voltage, VGS(V)
D
R
A
IN
C
U
R
E
N
T
,
I
D
(m
A
)
VDS=2V
ID vs. VDS
0
10
20
30
40
50
0
1
2
3
Drain to Source voltage VDS(V)
D
R
A
IN
C
U
R
E
N
T
ID
(m
A
)
VGS=-0.1V/STEP
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|---|---|
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