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參數(shù)資料
| 型號(hào)： | MGF4951A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 181K |
| 代理商： | MGF4951A |
MITSUBISHI SEMICONDUCTOR
<GaAs FET>
MGF4951A/MGF4952A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(1/5)
June/2004
DESCRIPTION
The MGF4951A/MGF4952A super-low noise HEMT (High
Electron Mobility Transistor) is designed for use in C to K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
Low noise figure
@ f=12GHz
MGF4951A : NFmin. = 0.40dB (Typ.)
MGF4952A : NFmin. = 0.60dB (Typ.)
High associated gain
@ f=12GHz
Gs = 12.0dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel
3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-4
V
VGSO
Gate to source voltage
-4
V
ID
Drain current
60
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS
(Ta=25
°C )
Synbol
Parameter
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
IG=-10
A
-3
--
V
IGSS
Gate to source leakage current
VGS=-2V,VDS=0V
--
50
A
IDSS
Saturated drain current
VGS=0V,VDS=2V
15
--
60
mA
VGS(off)
Gate to source cut-off voltage
VDS=2V,ID=500
A
-0.1
--
-1.5
V
gm
Transconductance
VDS=2V,ID=10mA
--
70
--
mS
Gs
Associated gain
VDS=2V,
11.0
12.0
--
dB
NFmin.
Minimum noise figure
ID=10mA
MGF4951A
--
0.40
0.50
dB
f=12GHz
MGF4952A
--
0.60
0.80
dB
Outline Drawing
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF4953A | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4954A | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4953B | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4961B | K BAND, Si, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4963BL | K BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF4951A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
| MGF4952A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
| MGF4953A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) |
| MGF4953A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
| MGF4953B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package |
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