參數(shù)資料
型號: MGF0919A-01
元件分類: 功率晶體管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
封裝: HERMETIC SEALED PACKAGE-2
文件頁數(shù): 4/4頁
文件大?。?/td> 0K
代理商: MGF0919A-01
< High-power GaAs FET (small signal gain stage) >
MGF0919A
L & S BAND / 1W
SMD non - matched
Publication Date : Apr., 2011
4
2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
相關(guān)PDF資料
PDF描述
MGF0919A S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MGF0919A-03 S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MGF1902B X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
MGF1952A-01 KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MGF1952A KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGF0920A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ]
MGF0920A_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0921A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0921A_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0951P 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET Plastic Mold Lead-less PKG