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參數(shù)資料
| 型號： | MGF0917A-03 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, SMD, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | MGF0917A-03 |
Mitsubishi Electric
June/2004
MGF0917A
S PARAMETERS
(Ta=25
°C , VDS=10V,ID=75mA, Reference Plane see Fig.1)
Fig.1 OUTLINE DRAWING
0.80
0.25
(1) Gate
(2) Drain
(3) Source
4.00
(2)
0.3
Gate Mark
Round corner
(1)
4.20
(2)
BACK SIDE PATTERN
2.5
(Unit:mm)
0.6
2.0
0.8
(1)
(3)
Gate Mark
2.8
1.20
Reference Plane
freq.
K
MAG/MSG
(MHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(dB)
600
0.981
-33.12
4.043
146.73
0.013
60.97
0.542
-37.01
0.21
24.93
1000
0.963
-52.23
3.628
130.91
0.017
47.27
0.574
-55.99
0.27
23.29
1400
0.950
-67.81
3.204
115.76
0.020
33.78
0.613
-71.29
0.32
22.05
1800
0.940
-80.66
2.813
101.60
0.023
20.83
0.654
-84.14
0.37
20.87
2200
0.933
-91.42
2.480
88.63
0.025
8.72
0.694
-95.18
0.42
19.97
2600
0.928
-100.60
2.190
76.98
0.026
-2.30
0.732
-104.65
0.48
19.25
3000
0.925
-108.60
1.944
66.64
0.026
-12.04
0.765
-112.60
0.55
18.74
3400
0.922
-115.73
1.755
57.57
0.026
-20.38
0.793
-119.01
0.61
18.29
3800
0.920
-122.21
1.598
49.63
0.025
-27.27
0.816
-123.90
0.68
18.06
4200
0.919
-128.21
1.473
42.64
0.024
-32.78
0.834
-127.39
0.75
17.88
4600
0.917
-133.86
1.381
36.36
0.023
-37.04
0.848
-129.77
0.81
17.78
5000
0.915
-139.27
1.314
30.53
0.023
-40.28
0.859
-131.44
0.84
17.57
5400
0.911
-144.52
1.270
24.85
0.023
-42.81
0.867
-132.90
0.88
17.42
5800
0.905
-149.72
1.251
19.04
0.025
-44.98
0.874
-134.71
0.86
16.99
6200
0.895
-155.02
1.250
12.78
0.028
-47.24
0.880
-137.32
0.82
16.50
6600
0.881
-160.60
1.268
5.79
0.032
-50.03
0.885
-140.94
0.79
15.98
7000
0.860
-166.70
1.310
-2.21
0.037
-53.82
0.891
-145.42
0.76
15.49
7400
0.830
-173.68
1.366
-11.46
0.043
-59.06
0.895
-149.92
0.77
15.02
7800
0.789
179.59
1.451
-22.14
0.049
-66.14
0.897
-152.77
0.85
14.71
8200
0.734
165.49
1.557
-34.40
0.055
-75.38
0.895
-155.52
0.90
14.52
8600
0.662
149.83
1.670
-48.32
0.061
-86.96
0.884
-157.78
1.01
13.81
9000
0.581
121.51
1.779
-63.88
0.066
-100.89
0.863
-158.81
1.08
12.54
9400
0.521
81.43
1.864
-80.99
0.070
-116.97
0.837
-158.40
1.13
12.10
9800
0.525
36.33
1.872
-99.47
0.072
-134.73
0.802
-156.85
1.20
11.48
10200
0.622
-5.95
1.760
-119.01
0.072
-153.36
0.774
-154.83
1.21
11.11
10600
0.734
-39.56
1.553
-139.19
0.070
-171.68
0.759
-153.13
1.22
10.65
11000
0.820
-62.30
1.319
-159.45
0.066
174.68
0.758
-152.41
1.24
10.03
11400
0.876
-75.69
1.104
-179.08
0.060
163.25
0.766
-153.06
1.32
9.25
11800
0.905
-83.49
0.928
170.48
0.054
153.93
0.778
-154.90
1.39
8.64
12200
0.920
-88.74
0.785
158.33
0.047
146.49
0.792
-157.02
1.51
8.01
S11
S21
S12
S22
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF0918A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0918A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0918A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0920A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0920A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0918A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0918A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
| MGF0918A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0919A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
| MGF0919A_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
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