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參數(shù)資料
| 型號： | MGF0916A-01 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, SMD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | MGF0916A-01 |
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0916A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=6V
Ids=100mA
Rg=1k
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings
(Ta=25
°C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-8
V
VGDO
Gate to drain breakdown voltage
-8
V
ID
Drain current
250
mA
IGR
Reverse gate current
-0.6
mA
IGF
Forward gate current
1.5
mA
PT
Total power dissipation
1.5
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C
Electrical characteristics
(Ta=25
°C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
150
200
250
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=0.1mA
-1.5
-
-4.5
V
gm
Transconductance
VDS=3V,ID=100mA
-
90
-
mS
Po
Output power
VDS=6V,ID=100m A,f=1.9GHz
-
23
-
dBm
ηadd
Power added Efficiency
Pin=5dBm
-
30
-
%
GLP
Linear Power Gain
VDS=6V,ID=100mA,f=1.9GHz
-
19
-
dB
NF
Noise figure
-
1.0
-
dB
Rth(ch-c)
Thermal Resistance
*1
Vf Method
-
70
100
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Fig.1
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