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參數(shù)資料
| 型號(hào)： | MGF0913A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | L & S BAND GaAs FET [ SMD non - matched ] |
| 中文描述： | 蜇 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | MGF0913A |
Mitsubishi Electric June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0913A
L & S BAND GaAs FET
[ SMD non - matched ]
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
High power gain
Gp=13dB(TYP.) @f=1.9GHz
High power added efficiency
η
add=48%(TYP.) @f=1.9GHz,Pin=18dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=200mA
Rg=500
Delivery -01:
Tape & Reel(1K),
-03:
Trai(50pcs)
Absolute maximum ratings
(Ta=25
°
C)
Symbol
Parameter
V
GSO
Gate to sourcebreakdown voltage
V
GDO
Gate to drain breakdown voltage
I
D
Drain current
I
GR
Reverse gate current
I
GF
Forward gate current
P
T
Total power dissipation
Tch
Cannel temperature
Tstg
Storage temperature
Ratings
-15
-15
800
-2.5
5.4
5.0
175
-65 to +175
Unit
V
V
mA
mA
mA
W
°
C
°
C
Electrical characteristics
(Ta=25
°
C)
Symbol
Parameter
I
DSS
Saturated drain current
V
GS(off)
Gate to source cut-off voltage
gm
Transconductance
Test conditions
Limits
Typ.
Unit
Min.
Max.
V
DS
=3V,V
GS
=0V
400
550
800
mA
V
DS
=3V,I
D
=2.5mA
-1
-3
-5
V
V
DS
=3V,I
D
=300mA
-
200
-
mS
Po
Output power
V
DS
=10V,I
D
=200mA,f=1.9GHz
29.5
31
-
dBm
η
add
Power added Efficiency
Pin=18dBm
-
48
-
%
G
LP
Linear Power Gain
V
DS
=10V,I
D
=200mA,f=1.9GHz
11
13
-
dB
NF
Noise figure
-
2.0
-
dB
Rth(ch-c)
Thermal Resistance *1
Vf Method
-
20
30
°
C/W
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Fig.1
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