參數(shù)資料
型號(hào): MG800J2YS50A
廠商: POWEREX INC
元件分類: IGBT 晶體管
英文描述: 800 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-11
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 410K
代理商: MG800J2YS50A
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG800J2YS50A
Dual IGBTMOD
Compact IGBT Series Module
800 Amperes/600 Volts
2
7/05
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics
Symbol
MG800J2YS50A
Units
Collector-Emitter Voltage
VCES
600
Volts
Gate-Emitter Voltage
VGES
±20
Volts
Collector Current (DC)
IC
800
Amperes
Forward Current (DC)
IF
800
Amperes
Collector Dissipation (TC = 25°C)
PC
2900
Watts
Power Device Junction Temperature
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Mounting Torque, M5 Mounting Screws
27
in-lb
Mounting Torque, M8 Main Terminal Screws
88
in-lb
Module Weight (Typical)
680
Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
VISO
2500
Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0V
±10
A
Collector Cutoff Current
ICES
VCE = 600V, VGE = 0V
1.0
mA
Gate-Emitter Cutoff Voltage
VGE(off)
IC = 800mA,VCE = 5V
5.0
6.5
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
VGE = 15V, IC = 800A, Tj = 25°C
2.4
3.0
Volts
VGE = 15V, IC = 800A, Tj = 125°C
2.6
3.3
Volts
Input Capacitance
Cies
VCE = 10V, VGE = 0V, f = 1MHz
93000
pF
Gate-Emitter Voltage
VGE
13.0
15.0
17.0
Volts
Gate Resistance
RG
4.7
15.0
Ω
Inductive Load
td(on)
0.3
s
Switching
tr
0.25
s
Times
ton
VCC = 300V, IC = 800A,
0.55
s
td(off)
VGE = ±15V, RG = 4.7Ω
0.85
s
tf
0.15
0.3
s
toff
1.05
s
Forward Voltage
VF
IF = 800A, VGE = -10V, Tj = 25°C
2.3
3.0
Volts
IF = 800A, VGE = -10V, Tj = 125°C
2.1
Volts
Reverse Recovery Time
trr
IF = 800A, VGE = -10V, di/dt = 2000A/s
0.5
s
Junction to Case Thermal Resistance
Rth(j-c)Q
IGBT (Per 1/2 Module)
0.043
°C/Watt
Rth(j-c)D
FWDi (Per 1/2 Module)
0.056
°C/Watt
RTC Operating Current
Irtc
Tj = 25°C
1600
Amperes
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