
MG75J1ZS40
2001-02-22 2/5
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= ±20V, V
CE
= 0
―
―
±500
nA
Collector cut-off current
I
CES
V
CE
= 600V, V
GE
= 0
―
―
1.0
mA
Collector-emitter breakdown voltage
V
(BR) CES
I
C
= 10mA, V
GE
= 0
600
―
―
V
Gate-emitter cut-off voltage
V
GE (off)
I
C
= 75mA, V
CE
= 5V
3.0
―
6.0
V
Collector-emitter saturation voltage
V
CE (sat
)
I
C
= 75A, V
GE
= 15V
―
2.7
3.5
V
Input capacitance
C
ies
V
CE
= 10V, V
GE
= 0, f = 1MHz
―
6800
―
pF
Rise time
t
r
―
0.30
0.60
Turn-on time
t
on
―
0.40
0.80
Fall time
t
f
―
0.18
0.35
Switching time
Turn-off time
t
off
―
0.60
1.00
μs
Forward voltage
V
F
I
F
= 75A, V
GE
= 0
―
1.7
2.5
V
Reverse recovery time
t
rr
I
F
= 75A, V
GE
=
10V,
di / dt = 100A / μs
―
0.08
0.15
μs
Transistor
―
―
0.35
Thermal resistance
R
th (j-c)
Diode
―
―
0.83
°C / W
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use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2