參數(shù)資料
型號： MG600Q2YS60A
元件分類： IGBT 晶體管
英文描述： 600 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-11
文件頁數(shù)： 6/9頁
文件大?。?/td> 136K
代理商： MG600Q2YS60A
MG600Q2YS60A
2004-10-01
6/9
Gate resistance
RG (Ω)
Switching Loss
– RG
S
w
it
c
h
in
g
lo
s
(m
J
)
1000
10
5
100
20
10
15
Common emitter
VCC = 600V
VGE = ±15V
IC = 600A
: Tj = 25°C
: Tj = 125°C
Eoff
Eon
1200
0
800
600
400
200
1
2
3
4
5
1000
VCE , VGE – QG
Charge
QG (nC)
C
o
lle
c
to
r-
e
m
it
te
r
v
o
lt
a
g
e
V
C
E
(V
)
G
a
te
-e
m
it
te
r
v
o
lt
a
g
e
V
G
E
(V
)
0
800
600
1000
2000
3000
4000
400
200
0
16
12
8
4
Common emitter
RL = 1Ω
Tj = 25°C
VCE = 0
600
400
200
F
o
rw
a
rd
c
u
rr
e
n
t
I F
(A
)
IF – VF
Forward voltage
VF (V)
Common cathode
VGE = 0
125
Tj = 25°C
40
Switching Time
– IC
Collector current
IC (A)
S
w
it
c
h
in
g
ti
m
e
(
s
)
10000
10
0
100
200
300
400
1000
100
500
600
toff
td(off)
ton
td(on)
tr
tf
Collector current
IC (A)
Switching Loss
– IC
S
w
it
c
h
in
g
lo
s
(m
J
)
1000
10
0
200
300
600
100
400
500
Common emitter
VCC = 600V
VGE = ± 15V
RG = 7.5Ω
: Tj = 25°C
: Tj = 125°C
Eoff
Eon
Gate resistance
RG (Ω)
Switching Time
– RG
S
w
it
c
h
in
g
ti
m
e
(
s
)
10000
100
5
1000
20
10
15
Common emitter
VCC = 600V
VGE = ±15V
: Tj = 25°C
IC = 600A
: Tj = 125°C
toff
td(off)
ton
td(on)
tr
tf
Common emitter
VCC = 600V
VGE = ±15V
: Tj = 25°C
RG = 7.5Ω
: Tj = 125°C
相關(guān)PDF資料
PDF描述
MG75H1BS1 75 A, 500 V, N-CHANNEL IGBT
MG75J1BS11 75 A, 600 V, N-CHANNEL IGBT
MG75J1BS11 75 A, 600 V, N-CHANNEL IGBT
MG75J2YS50 75 A, 600 V, N-CHANNEL IGBT
MG75J6ES50 75 A, 600 V, N-CHANNEL IGBT
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