參數(shù)資料
型號： MG600Q2YS60A
元件分類： IGBT 晶體管
英文描述： 600 A, 1200 V, N-CHANNEL IGBT
封裝： 2-126A2A, 11 PIN
文件頁數(shù)： 7/10頁
文件大?。?/td> 333K
代理商： MG600Q2YS60A
MG600Q2YS60A
2003-08-21
6
Gate resistance RG ()
Switching Loss – RG
Sw
itc
hin
glo
ss
(m
J)
1000
10
5
100
20
10
15
Common emitter
VCC = 600V
VGE = ±15V
IC = 600A
: Tj = 25°C
: Tj = 125°C
Eoff
Eon
1200
0
800
600
400
200
1
2
3
4
5
1000
VCE , VGE – QG
Charge QG (nC)
Col
le
ct
or-e
m
itt
er
vol
tage
V
CE
(V
)
Gat
e-e
m
itt
er
vol
tage
V
GE
(V
)
0
800
600
1000
2000
3000
4000
400
200
0
16
12
8
4
Common emitter
RL = 1
Tj = 25°C
VCE = 0
600
400
200
Forw
ard
cu
rrent
I
F
(A
)
IF – VF
Forward voltage VF (V)
Common cathode
VGE = 0
125
Tj = 25°C
40
Switching Time – IC
Collector current IC (A)
Sw
itc
hin
gti
m
e
(
s)
10000
10
0
100
200
300
400
1000
100
500
600
toff
td(off)
ton
td(on)
tr
tf
Collector current IC (A)
Switching Loss – IC
Sw
itc
hin
glo
ss
(m
J)
1000
10
0
200
300
600
100
400
500
Common emitter
VCC = 600V
VGE = ±15V
RG = 7.5
: Tj = 25°C
: Tj = 125°C
Eoff
Eon
Gate resistance RG ()
Switching Time – RG
Sw
itc
hin
gti
m
e
(
s)
10000
100
5
1000
20
10
15
Common emitter
VCC = 600V
VGE = ±15V
: Tj = 25°C
IC = 600A
: Tj = 125°C
toff
td(off)
ton
td(on)
tr
tf
Common emitter
VCC = 600V
VGE = ±15V
: Tj = 25°C
RG = 7.5
: Tj = 125°C
相關(guān)PDF資料
PDF描述
MG600Q2YS60A 600 A, 1200 V, N-CHANNEL IGBT
MG75H1BS1 75 A, 500 V, N-CHANNEL IGBT
MG75J1BS11 75 A, 600 V, N-CHANNEL IGBT
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