參數(shù)資料
型號(hào): MG50Q2YS50
元件分類: IGBT 晶體管
英文描述: 78 A, 1200 V, N-CHANNEL IGBT
封裝: 2-94D4A, 7 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 252K
代理商: MG50Q2YS50
MG50Q2YS50
2001-04-20
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG50Q2YS50
High Power Switching Applications
Motor Control Applications
l High input impedance
l High speed : tf = 0.3s (Max)
@Inductive load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
DC
IC
(25°C / 80°C)
78 / 50
Collector current
1ms
ICP
(25°C / 80°C)
156 / 100
A
DC
IF
50
Forward current
1ms
IFM
100
A
Collector power dissipation
(Tc = 25°C)
PC
400
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 minute)
V
Screw torque (Terminal / mounting)
3 / 3
Nm
JEDEC
EIAJ
TOSHIBA
2-94D4A
Weight: 202g
Unit: mm
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