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參數(shù)資料
| 型號(hào)： | MG50J1ZS40 |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 2-94D2A, 5 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 388K |
| 代理商： | MG50J1ZS40 |
MG50J1ZS40
2001-08-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 600V, VGE = 0
―
1.0
mA
Collector-emitter
breakdown voltage
V(BR)CES
IC = 10mA, VGE = 0
600
―
V
Gate-emitter cut-off voltage
VGE (off)
IC = 50mA, VCE = 5V
3.0
―
6.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 50A, VGE = 15V
―
2.7
3.5
V
Input capacitance
Cies
VCE = 10V, VGE = 0f = 1MHz
―
4000
―
pF
Rise time
tr
―
0.30
0.60
Turn-on time
ton
―
0.40
0.80
Fall time
tf
―
0.18
0.35
Switching time
Turn-off time
toff
―
0.60
1.00
s
Reverse current
IR
VR = 600V
―
1.0
mA
Forward voltage
VF
IF = 50A, VGE = 0
―
1.7
2.5
V
Reverse recovery time
trr
IF = 50 A, VGE = 10 V,
di / dt = 100 A / s
―
0.08
0.15
s
Transistor
―
0.50
Thermal resistance
Rth (j-c)
Diode
―
1.00
°C / W
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