- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95929 > MG400J1US51 400 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | MG400J1US51 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 2-109A4A, 4 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 464K |
| 代理商： | MG400J1US51 |
MG400J1US51
2001-02-22 2/5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 600V, VGE = 0
―
4.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 40mA, VCE = 5V
5.0
7.0
8.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 400A, VGE = 15V
―
2.10
2.70
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
36000
―
pF
Turn-on delay time
td (on)
―
0.20
0.40
Rise time
tr
―
0.15
0.30
Turn-on time
ton
―
0.60
1.20
Turn-off delay time
td (off)
―
0.20
0.40
Fall time
tf
―
0.15
0.30
Switching time
Turn-off time
toff
Inductive load
VCC = 300V
IC = 400A
VGE = ±15V
RG = 2
(Note 1)
―
0.50
1.00
s
Forward voltage
VF
IF = 400 A, VGE = 0
―
2.30
3.00
V
Reverse recovery time
trr
IF = 400 A, VGE = 10 V,
di / dt = 400 A / s
―
0.08
0.15
s
Transistor stage
―
0.083
Thermal resistance
Rth (j-c)
Diode stage
―
0.20
°C / W
Note 1: Switching time test circuit & timing chart
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MG400J2YS45 | 400 A, 600 V, N-CHANNEL IGBT |
| MG400Q1US21 | 400 A, 1200 V, N-CHANNEL IGBT |
| MG40S2YK1 | 40 A, 1000 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MG400J2YS40 | 400 A, 600 V, N-CHANNEL IGBT |
| MG400Q1US2 | 400 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MG400J2YS50 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG400J2YS60A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA IGBT Module Silicon N Channel IGBT |
| MG400J2YS61A | 功能描述:IGBT MOD CMPCT DUAL 600V 400A RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| MG400Q1US1 | 制造商:n/a 功能描述:IGBT Module |
| MG400Q1US11 | 制造商:n/a 功能描述:IGBT Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。