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參數(shù)資料
| 型號(hào)： | MG150Q2YS51 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | 2-109C4A, 7 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 553K |
| 代理商： | MG150Q2YS51 |
MG150Q2YS51
2001-04-16
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 1200V, VGE = 0
―
2.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 150mA, VCE = 5V
3.0
―
6.0
V
Tj = 25°C
―
2.8
3.6
Collector-emitter saturation voltage
VCE (sat)
IC = 150A,
VGE = 15V
Tj = 125°C
―
3.1
4.0
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
18.0
―
nF
Turn-on delay time
td(on)
―
0.05
―
Rise time
tr
―
0.05
―
Turn-on time
ton
―
0.2
―
Turn-off delay time
td(off)
―
0.5
―
Fall time
tf
―
0.1
0.3
Switching time
Turn-off time
toff
Inductive load
VCC = 600V
IC = 150A
VGE = ±15V
RG = 5.6
(Note 1)
―
0.6
―
s
Forward voltage
VF
IF = 150A, VGE = 0
―
2.4
3.5
V
Reverse recovery time
trr
IF = 150A, VGE = 10V
di / dt = 700A / s
(Note 1)
―
0.1
0.25
s
Transistor stage
―
0.1
Thermal resistance
Rth (j-c)
Diode stage
―
0.24
°C / W
Note 1: Switching time and reverse recovery time test circuit & timing chart
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