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參數(shù)資料
| 型號(hào)： | MG150J1JS50 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 2-95A2A, 5 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 227K |
| 代理商： | MG150J1JS50 |
MG150J1JS50
2002-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0
―
2.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 15 mA, VCE = 5 V
5.0
7.0
8.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 150 A,VGE = 15 V
―
2.10
2.70
V
Input capacitance
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
―
14200
―
pF
Turn-on delay time
td (on)
―
0.15
0.30
Rise time
tr
―
0.15
0.30
Turn-on time
ton
―
0.50
1.00
Turn-off delay time
td (off)
―
0.20
0.40
Fall time
tf
―
0.15
0.30
Switching time
Turn-off time
toff
Inductive load
VCC = 300 V
IC = 150 A
VGE = ±15 V
RG = 6.2
(Note 1)
―
0.50
1.00
s
Reverse current
IR
VR = 600 V
―
1.0
mA
Forward voltage
VF
IF = 150 A, VGE = 0
―
2.30
3.00
V
Reverse recovery time
trr
IF = 150 A, VGE = 10 V
di/dt = 200 A/s
―
0.08
0.15
s
Transistor stage
―
0.16
Thermal resistance
Rth (j-c)
Diode stage
―
0.35
°C/W
Note 1: Switching time test circuit & timing chart
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| MG150J1ZS50 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT |
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| MG150J2YS11 | 制造商:n/a 功能描述:IGBT Module |
| MG150J2YS40 | 制造商:n/a 功能描述:_ |
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