參數(shù)資料
型號: MG1200FXF1US51
廠商: Toshiba Corporation
英文描述: TOSHIBA GTR Module Silicon N-Channel IGBT
中文描述: 東芝滋養(yǎng)模塊硅N溝道IGBT的
文件頁數(shù): 3/5頁
文件大?。?/td> 94K
代理商: MG1200FXF1US51
MG1200FXF1US51
2001-09-05
3
R
T
Collector-emitter voltage VCE (V)
I
C
– V
CE
(typ.)
C
C
Forward voltage VF (V)
I
F
– V
F
(typ.)
F
Collector current IC (A)
E
on
– I
C
(typ.)
T
Collector current IC (A)
E
off
– I
C
(typ.)
Forward current IF (A)
E
dsw
– I
F
(typ.)
Time t (s)
R
th
– t
(max)
T
°
/
VGE 15 V
Tvj 25°C
125°C
0
0
2
4
6
8
500
1000
1500
2000
2500
0
0
500
1000
1500
0.5
1.0
1.5
2.0
2.5
VCC 1800 V
RG 3.3
CGE 0.1 F
Ls 160 nH
VGE / 15 V
Tvj 125°C
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
Diode-stage
IGBT-stage
0.00003
Tvj 25°C
125°C
0
0
2
4
6
500
1000
1500
2000
2500
0
0
500
1000
1500
0.4
0.6
0.8
1.0
1.2
VCC 1800 V
di/dt 4900 A/ s
Ls 160 nH
VGE 15 V
Tvj 125°C
0.2
0.5
1.0
1.5
2.0
2.5
VCC 1800 V
RG 3.9
CGE 0.1 F
Ls 160 nH
VGE / 15 V
Tvj 125°C
0
0
500
1000
1500
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