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參數(shù)資料
| 型號： | MG1060-15 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 9.3 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE |
| 封裝： | CERAMIC, ROHS COMPLIANT, M15 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 204K |
| 代理商： | MG1060-15 |
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Typical Characteristics
1.0
-50°C
90°C
I Bi
as
I Threshold
Ratio
Powe
r
Output
(m
W)
0.8
0.6
0.4
0.2
300
250
200
150
100
0
1
2
3
0
2
4
6
8
10
12
VBias
VThreshold
Ratio
IBias Ratio vs. VBias Ratio
Bias Voltage (V)
Power Output vs. Bias Voltage
IMPORTANT:
For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
.
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