參數(shù)資料
型號： MG1022-16
廠商： MICROSEMI CORP-LOWELL
元件分類： 二極管(射頻、小信號、開關(guān)、功率)
英文描述： 40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
封裝： CERAMIC, ROHS COMPLIANT, M16
文件頁數(shù)： 1/4頁
文件大?。?/td> 204K
代理商： MG1022-16
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
Discrete Frequency: Cathode Heatsink
Features
●
CW Designs to 500 mW
●
Pulsed Designs to 10 W
●
Frequency Coverage Specified from 5.9–95 GHz
●
Low Phase Noise
●
High Reliability
Applications
●
Motion Detectors
●
Transmitters and Receivers
●
Beacons
●
Automotive Collision Avoidance Radars
●
Radars
●
Radiometers
●
Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
相關(guān)PDF資料
PDF描述
MG1060-15 9.3 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE
MG1040-16 26.5 GHz - 35 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
MG1013-16 18 GHz - 26.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
MG1044-11 23 GHz - 25 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE
MG1058-11 23 GHz - 25 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MG1023-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
MG1024-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
MG1025-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
MG103 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1T8051最高24M，8Kflash，256B RAM，雙DPTR，2個16bit Timer，增強型UART，2個外部中斷，15位類似ARM的WDT，6通道8bit ADC，12個通用IO，6單元PCA（含PWM模式），內(nèi)置LVD電路，工業(yè)級
MG1034-15 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
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