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參數(shù)資料
| 型號(hào)： | MG100Q2YS42 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | 2-109C1A, 7 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 388K |
| 代理商： | MG100Q2YS42 |
MG100Q2YS42
2001-08-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±20
A
Collector cut-off current
ICES
VCE = 1200V, VGE = 0
―
2.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 100mA ,VCE = 5V
3.0
―
6.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 100A, VGE = 15V
―
3.0
4.0
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
12000
―
pF
Rise time
tr
―
0.3
0.6
Turn-on time
ton
―
0.4
0.8
Fall time
tf
―
0.2
0.5
Switching time
Turn-off time
toff
―
0.8
1.5
s
Forward voltage
VF
IF = 100A, VGE = 0
―
2.0
3.0
V
Reverse recovery time
trr
IF = 100A, VGE = 10V
di / dt = 200A / s
―
0.25
0.5
s
Transistor
―
0.179
Thermal resistance
Rth (j-c)
Diode
―
0.5
°C / W
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