參數(shù)資料
型號: MFB-34S
廠商: Sanken Electric Co.,Ltd.
英文描述: 40V, Schottky Barrier Diode(40V,肖特基勢壘二極管)
中文描述: 40V的,肖特基二極管(40V的,肖特基勢壘二極管)
文件頁數(shù): 1/2頁
文件大?。?/td> 62K
代理商: MFB-34S
FMB-24
Schottky Barrier Diodes
40V
Parameter
Type No.
Absolute Maximum Ratings
I
FSM
HalfSingle Shot
V
RM
(V)
I
F (AV)
V
F
(V)
I
F
(A)
I
/
I
RP
(mA)
Rth (j-c)
I
(mA)
V
=
V
max per element
I
(H)
(mA)
t
rr
(ns)
Tj
(
°
C)
Tstg
(
°
C)
Electrical Characteristics (Ta
=
25
°
C)
(
°
C/W)
(g)
Mass
Others
FMB-24
4.0
6.0
40
10.0
50
60
0.55
0.55
0.58
2.0
3.0
5.0
5.00
35
100
100/100
–40 to +150
4.0
2.1
2.0
5.5
FMB-24M
FMB-24L
FMB-24H
FMB-34S
A
B
7.5
7.50
50
6.0
5.00
35
7.5
10.00
65
15.0
20.00
100
15.0
100
12.0
75
15.0
150
30.0
300
FMB-34
FMB-34M
10
20
50
40
30
0 1
5
50
10
20ms
I
F
FMB-24M
FMB-24L
20
10
1
0.1
0.01
0
0.5
1.0
1.5
20
10
30
10
0.1
1
0.01
0.001
0
0
10
20
30
40
50
60
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
0.01
0.001
50
10
1
0.1
0.01
0.001
0
20
40
50
60
10
30
10
20
60
30
40
50
0 1
5
50
10
20ms
I
F
10
20
60
30
40
50
0 1
5
50
10
20ms
I
F
3.3
0
3
1.35
10.0
4
4
0.85
2.54
2.54
4.2
2.8
C0.5
2.4
1
1
±
0
0.45
9.0
15.0
5
2
3
1
2
2
0
3.3
3.4
1.0
2.3
5.45
5.45
5.0
0.65
2.6
±
0
±
0
50
10
1
0.1
0.01
0
0.5
1.0
1.5
50
10
1
0.1
0.01
0.004
0
20
40
50
60
10
30
T
a
=
100oC
60oC
26oC
25oC
100oC
T
a
=
60oC
0
80
110
130
1
2
3
4
5
120
90
Case Temperature Tc
(
°
C)
100
t/T=
t/T=
D.C.
t/T=
Sinewave
0
80
110
130
1.2
2.4
3.6
4.8
6.0
120
90
Case Temperature Tc
(
°
C)
100
t/T=
t/T=
D.C.
t/T=
Sinewave
t/T=
t/T=
D.C.
t/T=
Sinewave
0
80
110
130
2
4
6
8
10
120
90
Case Temperature Tc
(
°
C)
100
T
a
125oC
=
100oC
60oC
27oC
27oC
100oC
T
a
=
60oC
T
a
=
100oC
60oC
25oC
100oC
T
a
=
60oC
26oC
94
V
=V
Ta=100
°
C
max per element
Fig.
max per
element
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—I
R
Characteristics
(Typical)
A
F
(
Tc—I
F(AV)
Derating
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—I
R
Characteristics
(Typical)
A
F
(
Tc—I
F(AV)
Derating
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—I
R
Characteristics
(Typical)
A
F
(
Tc—I
F(AV)
Derating
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
A
Fig.
B
Fig.
+0.2
–0.1
+0.2
–0.1
相關(guān)PDF資料
PDF描述
MGA-412P8 GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGA-412P8-BLKG GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGA-412P8-TR1G GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGA-412P8-TR2G GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGB15N35CL Ignition IGBT 15 Amps, 350 Volts(15A,350V鉗位電壓,點火絕緣柵雙極型晶體管(D2PAK封裝))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MFB35704001 制造商:LG Corporation 功能描述:Lens
MFB35938701 制造商:LG Corporation 功能描述:Lens
MFB35967701 制造商:LG Corporation 功能描述:Lens
MFB35967702 制造商:LG Corporation 功能描述:Lens
MFB36381601 制造商:LG Corporation 功能描述:Lens