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參數(shù)資料
| 型號： | MF35-1000R |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 整流器 |
| 英文描述： | 40 A, 1000 V, SILICON, RECTIFIER DIODE, DO-5 |
| 封裝： | DO-5, 1 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 100K |
| 代理商： | MF35-1000R |
2/8
www.dynexsemi.com
MF35
SURGE RATINGS
Conditions
Max.
Units
400
A
800
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with V
RRM ≤ 10V, Tj = 125
oC
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
oC/W
-0.2
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 3.5Nm
with mounting compound
Symbol
Parameter
-0.8
oC/W
Min.
t
rr
5
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RM
Peak reverse current
Reverse recovery time
Q
R
Recovered charge
V
TO
Threshold voltage
r
T
Slope resistance
At T
vj = 125
o
C-
7.0
m
At T
vj = 125
o
C-
1.2
V
-10
C
-
200
ns
At V
RRM, Tcase = 100
oC-
mA
At 120A peak, T
case = 25
o
C-
2.0
V
Conditions
Max.
CHARACTERISTICS
-
125
oC
C
125
-55
Storage temperature range
T
stg
T
vj
Virtual junction temperature
Forward (conducting)
-
125
oC
10ms half sine; T
j = 125
oC
Nm
3.8
3.2
Mounting torque
-
Reverse (blocking)
I
F = 1A, diRR/dt = 25A/s, Tcase = 25C,
V
R = 100V
I
F = 50A, diRR/dt = 50A/s, Tcase = 25C,
V
R = 100V
CURRENT RATINGS
Symbol
Parameter
Conditions
Units
Max.
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Half sine wave resistive load, T
case = 65
oC40
A
T
case = 65
oC63
A
T
case = 65
oC50
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MF351200 | 制造商:DUO 功能描述:FAST RECOVERY DIODE |
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