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參數(shù)資料
| 型號： | MDO1200-20N1 |
| 廠商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2000 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 350K |
| 代理商： | MDO1200-20N1 |
IXYS
Rectifier Diode Module Types MDO1200-20N1 to MDO1200-22N1
Data Sheet. Types MDO1200-20N1 to MDO1200-22N1 Issue 1
Page 4 of 8
January, 2006
6.2 Calculating diode VF using ABCD coefficients – For loss calculations
The forward characteristic, IF vs. VF, is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the equation for VF in terms of IT given below:
()
F
I
D
I
C
I
B
A
V
+
+
+
=
ln
The ABCD constants are given below for both hot and cold characteristics. The resulting values for VF
agree with the true device characteristic over a current range, which is limited to that plotted.
25°C Coefficients
160°C Coefficients
A
0.8219376
A
0.6177319
B
0.02800357
B
0.02398102
C
4.58252×10
-5
C
4.93957×10
-5
D
2.125018×10
-3
D
4.419761×10
-3
6.3 D.C. Thermal Impedance Calculation
∑
=
=
n
p
t
p
t
p
e
r
1
τ
n = number of terms in the series and
t = duration of heating pulse in seconds.
rt = thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
The coefficients for this device are shown in the tables below:
D.C. Junction to Case
Term
1
23
45
6
rp
1.0×10
-5
0.016708
0.018317
4.346771×10
-3
1.004820×10
-3
1.0×10
-5
τp
2.460066
0.999836
21.998376
9.793053×10
-3
2.003674
5.007343
7.0 Reverse recovery ratings
(i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 s integration time i.e.
∫
=
s
rr
dt
i
Q
150
0
.
(iii)
2
1
t
Factor
K
=
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