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參數(shù)資料
| 型號： | MD3251LEADFREE |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 488K |
| 代理商： | MD3251LEADFREE |
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Emitter Voltage
VCEO
40
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
50
mA
Power Dissipation (One Die)
PD
575
mW
Power Dissipation (Both Die)
PD
625
mW
Power Dissipation (One Die), TC=25°C
PD
1.8
W
Power Dissipation (Both Die), TC=25°C
PD
2.5
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=40V
10
nA
ICBO
VCB=40V, TA=150°C
10
μA
IEBO
VBE=3.0V
10
nA
BVCEO
IC=10mA
40
V
BVCBO
IC=10μA
50
V
BVEBO
IE=10μA
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.25
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.50
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.60
0.90
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.2
V
hFE
VCE=5.0V, IC=10μA (MD3250,A)
25
hFE
VCE=5.0V, IC=10μA (MD3251,A)
50
hFE
VCE=5.0V, IC=100μA (MD3250,A)
50
150
hFE
VCE=5.0V, IC=100μA (MD3251,A)
80
300
hFE
VCE=5.0V, IC=1.0mA (MD3250,A)
50
150
hFE
VCE=5.0V, IC=1.0mA (MD3251,A)
100
300
hFE
VCE=5.0V, IC=10mA (MD3250,A)
50
hFE
VCE=5.0V, IC=10mA (MD3251,A)
100
MD3250 MD3250A
MD3251 MD3251A
DUAL PNP
SILICON TRANSISTOR
TO-78 CASE
Central
Semiconductor Corp.
TM
R0 (9-June 2009)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MD3250
and MD3251 Series types are dual PNP silicon
transistors, manufactured by the epitaxial planar
process utilizing two individual chips mounted in
a hermetically sealed metal case, designed for
differential amplifier applications.
MARKING: FULL PART NUMBER
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