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參數(shù)資料
| 型號： | MD2103DFX |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, ISOWATT218FX, 3 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 184K |
| 代理商： | MD2103DFX |
Electrical characteristics
MD2103DFX
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
s, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0)
VCE = 1500V
VCE = 1500V TC = 125°C
0.2
2
mA
IEBO
Emitter cut-off current
(IC =0)
VEB = 5V
50
125
mA
V(BR)EBO
Emitter-base brakdown
voltage (IC = 0)
IE = 700mA
11
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 3A
_ _ IB =0.75A
1.8
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 3A
_ _ IB =0.75A
1.5
V
hFE
(1)
DC current gain
IC = 1A
VCE =5V
IC = 3A
VCE =1V
IC = 3A
VCE =5V
6.5
17
6
9.5
ts
tf
Inductive load
Storage time
Fall time
IC =3A
fh =16kHz
IB(on) =0.5A VBE(off) =-2.7V
LBB(off) =6.3H
(see Figure 9)
3.8
0.25
s
VF
Diode forward voltage
IF = 3A
2V
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