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參數(shù)資料
| 型號： | MD2103DFH |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High voltage NPN power transistor for standard definition CRT display |
| 中文描述： | 高壓npn型為標準清晰度陰極射線管顯示器功率晶體管 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 203K |
| 代理商： | MD2103DFH |
July 2006
Rev 1
1/11
11
Order codes
Part number
Marking
Package
Packing
MD2103DFH
MD2103DFH
TO-220FH
Tube
MD2103DFH
High voltage NPN power transistor for standard
definition CRT display
General features
■
State-of-the-art technology:
– Diffused collector “enhanced generation”
■
More stable performance versus operating
temperature variation
■
Low base drive requirement
■
Tighter h
FE
range at operating collector current
■
Fully insulated power package U.L. compliant
■
Integrated free wheeling diode
■
In compliance with the 2002/93/EC European
Directive
Description
The MD2103DFH is manufactured using Diffused
Collector in Planar technology adopting new and
enhanced high voltage structure.
The new MD product series show improved
silicon efficiency briging updated performance to
the horizontal deflection stage.
Applications
■
Horizontal deflection output for TV
Internal schematic diagram
TO-220FH
1
23
R
BE
=65
(typ)
www.st.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MD2103DFP | 功能描述:開關(guān)晶體管 - 偏壓電阻器 HI VLT NPN PWR TRANS STANDARD DEF RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MD2103DFX | 功能描述:兩極晶體管 - BJT HI VLT NPN PWR TRANS STANDARD DEF RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MD2114/BVA | 制造商:Rochester Electronics LLC 功能描述: |
| MD2114A-5 | 制造商:Rochester Electronics LLC 功能描述: |
| MD2114A-5/B | 制造商:Intel 功能描述: 制造商:INTELC 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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