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| 型號： | MD2009DFX |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, TO-3PF, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | MD2009DFX |
MD2009DFX
Electrical characteristics
Doc ID 12125 Rev 5
3/10
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off
current (VBE = 0)
VCE = 1500V
VCE = 1500V, Tc= 125°C
0.2
2
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
40
120
mA
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 700mA
10
V
VCE(sat)
(1)
1.
Pulse test: pulse duration
≤300 s, duty cycle ≤2%.
Collector-emitter
saturation voltage
IC = 5.5A ,
IB = 1.4A
2.8
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 5.5A ,
IB = 1.4A
1.3
V
hFE
(1)
DC current gain
IC = 1A,
VCE = 5V
IC = 5.5A,
VCE = 1V
IC = 5.5A ,
VCE = 5V
5
18
4.7
7
VF
(1)
Diode forward voltage
IF= 5.5 A
1.6
V
ts
tf
Inductive load
Storage time
Fall time
IC = 5A,,, fh = 16KHz
IB(on) = 1.5A,, VBE(off) = -2.7V
LBB(off) = 6.2H
4.5
0.3
6
0.6
s
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