參數(shù)資料
型號: MCZ34652EFR2
廠商: Freescale Semiconductor
文件頁數(shù): 4/26頁
文件大?。?/td> 1802K
描述: IC HOTSWAP CTRLR 2A NEG 16SOIC
標(biāo)準(zhǔn)包裝: 2,500
類型: 熱交換開關(guān)
應(yīng)用: 通用
內(nèi)部開關(guān):
電流限制: 2A
電源電壓: 15 V ~ 80 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC N
包裝: 帶卷 (TR)
Analog Integrated Circuit Device Data
4
Freescale Semiconductor
34652
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
rchived by Freescale Semiconductor, Inc., 2008
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Power Supply Voltage
V
PWR
85
V
Power MOSFET Energy Capability
E
MOSFET
Varies 
(1)
mJ
Continuous Output Current
(2)
I
O (CONT)
2.0
A
Maximum Voltage
DISABLE Pin
UV Pin
OV, ILIM, ICHG, and TIMER Pins
PG Pin (V
PG
 - V
IN
)
PG
 Pin (V
PG
 - V
IN
)





V
IN
 - 0.3 to V
PWR
 + 5.5
7.0
5.0
85
85
V
All Pins Minimum Voltage

- 0.3
V
PG, PG
 Maximum Current

Internally Limited
A
ESD Voltage, All Pins
(3)
Human Body Model
Machine Model
V
ESD3
V
ESD4
?2000
?200
V
THERMAL RATINGS
Storage Temperature
T
STG
- 65 to 150
Operating Temperature
Ambient
(4)
Junction
T
A
T
J
- 40 to 85
- 40 to 160
Notes
1. Refer to the section titled Power MOSFET Energy Capability on page 23 for a detailed explanation on this parameter.
2. Continuous output current capability so long as T
J
 is d 160?/SPAN>C.
3. ESD1 testing is performed in accordance with the Human Body Model (C
ZAP
 = 100pF, R
ZAP
 = 1500 ?, ESD2 testing is performed in
accordance with the Machine Model (C
ZAP
 = 200 pF, R
ZAP
 = 0 ?.
4. The limiting factor is junction temperature, taking into account power dissipation, thermal resistance, and heatsinking.
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