參數(shù)資料
型號(hào): MCZ33285EFR2
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Dual High-Side TMOS Driver
中文描述: 雙高邊的TMOS驅(qū)動(dòng)器
文件頁數(shù): 1/13頁
文件大?。?/td> 173K
代理商: MCZ33285EFR2
Document Number: MC33285
Rev. 5.0, 2/2007
Freescale Semiconductor
Advance Information
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
Freescale Semiconductor, Inc., 2007. All rights reserved.
Dual High-Side TMOS Driver
A single input controls the 33285 in driving two external high-side N-
Channel TMOS power FETs controlling incandescent or inductive
loads. Pulse Width Modulated (PWM) input control to 1.0 kHz is
possible. The 33285 contains a common internal charge pump used to
enhance the Gate voltage of both FETs.
An external charge capacitor provides access to the charge pump
output. Both external FETs are protected against inductive load
transients by separate internal source-to-gate dynamic clamps. The
power FETs are protected by the 33285 with short-circuit delay time of
800
μ
s. The device is designed to withstand reverse polarity battery
and load dump transients, encountered in automotive applications.
Features
PWM Capability
Power TMOS Number One (OUT1) Short-Circuit Detection and
Short-Circuit Protection
Voltage Range 7.0 V
40 V
Extended Temperature Range from -40
°
C
125
°
C
Load Dump Protected
Overvoltage Detection and Activation of OUT2 During
Overvoltage
Single Input Control for Both Output Stages
Capacitor Value of 100 nF Connected to Pin CP
Analog Input Control Measurement Detection
OUT1 LOAD Leakage Measurement Detection
Pb-Free Packaging Designated by Suffix Code EF
Figure 1.
33285
Simplified Application Diagram
HIGH-SIDE TMOS DRIVER
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
33285
ORDERING INFORMATION
Device
Temperature
Range (T
A
)
Package
MC33285D/R2
-40°C to 125°C
8 SOICN
MCZ33285EF/R2
SRC
OUT1
OUT2
DRN
GND
33285
IN
CP
VCC
VPWR
Motor
VCC
Input Control
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