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參數(shù)資料
| 型號： | MCZ33198EF |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Automotive High-Side TMOS Driver |
| 中文描述： | 汽車高邊的TMOS驅(qū)動器 |
| 文件頁數(shù)： | 13/17頁 |
| 文件大?。?/td> | 203K |
| 代理商： | MCZ33198EF |
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
33198
FUNCTIONAL DESCRIPTION
INTRODUCTION
the switch off time can be long, compared to the on-switching
time response. This is due to the 110mA gate discharge
current. To improve this parameter, a resistor can be added
in parallel with the gate of the MOSFET. See
Figures 16
and
17
.
Figure 16. Schematic with R
GATE
Resistor
Figure 17. R
GATE
Signal Comparison
This resistor will reduce (in some way) the charge pump
output voltage available for the MOSFET, but the device will
still provide enough Gate-to-Source voltage to maintain the
MOSFET “on” in good conditions. The resistor will mainly act
as an additional discharge current, which will reduce the
switch off time of the overall application. See the
Table 6,
Switching Off Characteristics with MOSFET Additional Gate
Resistor
and
Figure 15
, which show the pin 4 voltage
depending on the additional gate resistor and the off
switching time due to this resistor.
If a very low switching time is needed, the resistor has to
be an extremely low value, resulting in low gate voltage not
high enough to ensure proper MOSFET operation. In this
case, a logic level MOSFET can be used. Logic levels will
operate with V
GS
of 5.0V, with the same performance as a
standard MOSFET having a 12V V
GS
. Care should be taken
regarding the maximum gate to source voltage of a logic level
MOSFET. An additional zener might be necessary to prevent
gate oxide damage.
REVERSE BATTERY
The device does not sustain reverse battery operation for
V
CC
voltages greater than - 0.6V in magnitude. In application,
pin 5 should be protected from reverse battery by connecting
a diode in series with the V
BAT
line.
Figure 18. 33198 Reverse Battery
1
4
3
Vbat
Vbat
1K
Rg
LOAD
0V
5V
INPUT SIGNAL PIN7
Vcc + 15V typ
0V
Vgate WITHOUT Rgate
Vgate WITH Rgate
Toff
Toff
Table 6. Switching Off Characteristics with MOSFET
Additional Gate Resistor
R
GATE
(R
G
)
VCC (V)
V
GATE
(V)
T
OFF
(
μ
s
ec)
No R
7.0
16
450
10
23
700
14
28
750
20
34
780
68 k
7.0
14
160
10
22
230
14
27
230
20
33
220
39 k
7.0
13
100
10
21
160
14
26
160
20
32
150
15 k
7.0
11
30
10
17.5
50
14
24
50
20
28.5
50
Notes
1.
Time from negative edge of input signal (Pin 7) to negative
edge of gate voltage (Pin 4) measured at 5V threshold.
Gate discharge time, not LOAD switching OFF time.L
TMOS used is Freescale MTP50N06, load 10
resistor.
2.
3.
C
7 INPUT
6 STATUS
Vbat
Vbat
LOAD
4
2
R
drn
GATE
1 K
DRN
5
SOURCE 1
TI8
GND
3
VCC
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MCZ33198EFR2 | 功能描述:功率驅(qū)動器IC CHARGE PUMP IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MCZ33199EF | 功能描述:外圍驅(qū)動器與原件 - PCI AUTO SERIAL LINK DRVR RoHS:否 制造商:PLX Technology 工作電源電壓: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FCBGA-1156 封裝:Tray |
| MCZ33199EFR2 | 功能描述:外圍驅(qū)動器與原件 - PCI SERIAL LINK DRIVER RoHS:否 制造商:PLX Technology 工作電源電壓: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FCBGA-1156 封裝:Tray |
| MCZ33199R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Automotive ISO 9141 Serial Link Driver |
| MCZ33285EF | 功能描述:功率驅(qū)動器IC DUAL HIGH SIDE TMOS DRIV RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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