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參數資料
| 型號： | MCT6 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler DC-IN 2-CH Transistor DC-OUT 8-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Dual Phototransistor |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 159K |
| 代理商： | MCT6 |
Document Number: 83645
Rev. 1.6, 17-May-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
MCT6
Optocoupler, Phototransistor Output,
Dual Channel
Vishay Semiconductors
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Rated forward current, DC
Peak forward current, DC
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector current
Collector emitter breakdown voltage
Power dissipation
Derate linearly from 25 °C
COUPLER
Isolation test voltage
TEST CONDITION
SYMBOL
VALUE
UNIT
60
3.0
100
1.3
mA
A
mW
mW/°C
1.0 μs pulse, 300 pps
I
FM
P
diss
I
C
30
30
150
2.0
mA
V
mW
mW/°C
BV
CEO
P
diss
V
ISO
R
IO
R
IO
5300
M
10
12
10
11
7.0
7.0
400
5.33
- 55 to + 150
- 55 to + 100
10
V
RMS
mm
mm
mW
mW/°C
°C
°C
s
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Creepage distance
Clearance distance
Total package dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Lead soldering time at 260 °C
P
tot
T
stg
T
amb
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
Reverse current
Junction capacitance
OUTPUT
Collector emitter breakdown voltage
I
C
= 1.0 μA, I
E
= 10 μA
Emitter collector breakdown voltage
I
C
= 10
A, I
E
= 10 μA
Collector emitter leakage current
Collector emitter capacitance
COUPLER
Saturation voltage, collector emitter
I
C
= 2.0 mA, I
F
= 16 mA
Capacitance (input to output)
Capacitance between channels
I
C
= 2.0 mA, V
CC
= 10 V,
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 20 mA
V
R
= 3.0 V
V
F
= 0 V
V
F
I
R
C
j
1.25
0.1
25
1.50
10
V
μA
pF
BV
CEO
BV
ECO
I
CEO
C
CE
30
7.0
65
10
1.0
8.0
V
V
nA
pF
V
CE
= 10 V
V
CE
= 0 V
100
V
CEsat
C
IO
0.40
V
pF
pF
f = 1.0 MHz
f = 1.0 MHz
0.5
0.4
Bandwidth
R
L
= 100
150
kHz
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