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參數(shù)資料
| 型號： | MCR25 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 可控硅整流器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 431K |
| 代理商： | MCR25 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On-State Current Rating of 25 Amperes RMS
High Surge Current Capability — 300 Amperes
Industry Standard TO–220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125
°
C)
MCR25D
MCR25M
MCR25N
VDRM
VRRM
400
600
800
Volts
On-State RMS Current
(All Conduction Angles)
IT(RMS)
25
A
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125
°
C)
ITSM
300
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
373
A2sec
Peak Gate Power (Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
Average Gate Power (t = 8.3 ms, TC = 80
°
C)
Peak Gate Current (Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
Tstg
20.0
Watts
0.5
Watts
2.0
A
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
1.5
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 5 Seconds
TL
260
°
C
(1)
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MCR25/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A–06
(TO-220AB)
Style 3
K
A
G
SCRs
25 AMPERES RMS
400 thru 800
VOLTS
*Motorola preferred devices
A
相關PDF資料 |
PDF描述 |
|---|---|
| MCR264-10 | Thyristors |
| MCR264-4 | Thyristors |
| MCR264-5 | Thyristors |
| MCR264-6 | Thyristors |
| MCR264-7 | Thyristors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCR25_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR25_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Thick film rectangular Low Resistance Series |
| MCR25_11 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Ohmic Thick Film Chip Resistors |
| MCR25_2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Ohmic Thick Film Chip Resistors |
| MCR25D | 功能描述:SCR 400V 25A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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