V
參數(shù)資料
型號： MCP6V28T-E/MS
廠商： Microchip Technology
文件頁數(shù)： 23/50頁
文件大?。?/td> 0K
描述： IC OPAMP AUTO-ZERO SGL 8SOIC
標準包裝： 2,500
放大器類型： 自動調零
電路數(shù)： 1
輸出類型： 滿擺幅
轉換速率： 1 V/µs
增益帶寬積： 2MHz
電流 - 輸入偏壓： 7pA
電壓 - 輸入偏移： 2µV
電流 - 電源： 620µA
電流 - 輸出 / 通道： 22mA
電壓 - 電源，單路/雙路(±)： 2.3 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-TSSOP，8-MSOP（0.118"，3.00mm 寬）
供應商設備封裝： 8-MSOP
包裝： 帶卷 (TR)
2011 Microchip Technology Inc.
DS25007B-page 3
MCP6V26/7/8
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings
VDD –VSS ..............................................................................6.5V
Current at Input Pins ......................................................±2 mA
Analog Inputs (VIN+ and VIN–) .......... VSS – 1.0V to VDD+1.0V
All other Inputs and Outputs .................. VSS – 0.3V to VDD+0.3V
Difference Input voltage ............................................. |VDD –VSS|
Output Short Circuit Current .......................................Continuous
Current at Output and Supply Pins ...................................±30 mA
Storage Temperature ..........................................-65°C to +150°C
Max. Junction Temperature .............................................. +150°C
ESD protection on all pins (HBM, CDM, MM)
≥ 4 kV,1.5 kV, 300V
Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other
conditions above those indicated in the operational
listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may
affect device reliability.
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.3V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL = 10 kΩ to VL and CS = GND (refer to Figure 1-5 and Figure 1-6).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
VOS
-2
—
+2
V
TA = +25°C (Note 1)
Input Offset Voltage Drift
with Temperature (linear Temp. Co.)
TC1
-50
—
+50
nV/°C TA = -40 to +125°C
Input Offset Voltage Quadratic
Temperature Coefficient
TC2
—±0.2
—
nV/°C2 TA = -40 to +125°C
Power Supply Rejection
PSRR
125
142
—
dB
Input Bias Current and Impedance
Input Bias Current
IB
—+7
—
pA
Input Bias Current across
Temperature
IB
—+110
—
pA
TA = +85°C
IB
—+1.2
+5
nA
TA = +125°C
Input Offset Current
IOS
—±70
—
pA
Input Offset Current across
Temperature
IOS
—±50
—
pA
TA = +85°C
IOS
—±60
—
pA
TA = +125°C
Common Mode Input Impedance
ZCM
—1013||12
—
Ω||pF
Differential Input Impedance
ZDIFF
—1013||12
—
Ω||pF
Note 1:
Set by design and characterization. Due to thermal junction and other effects in the production
environment, these parts can only be screened in production (except TC1; see Appendix B: “Offset
2:
Figure 2-18 shows how VCML and VCMH changed across temperature for the first production lot.
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