Electrical Characteristics: Unless" />
參數(shù)資料
型號: MCP6V26-E/SN
廠商: Microchip Technology
文件頁數(shù): 45/50頁
文件大?。?/td> 0K
描述: IC OPAMP AUTO-ZERO SGL 8SOIC
標(biāo)準(zhǔn)包裝: 100
放大器類型: 自動調(diào)零
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 1 V/µs
增益帶寬積: 2MHz
電流 - 輸入偏壓: 7pA
電壓 - 輸入偏移: 2µV
電流 - 電源: 620µA
電流 - 輸出 / 通道: 22mA
電壓 - 電源,單路/雙路(±): 2.3 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 管件
2011 Microchip Technology Inc.
DS25007B-page 5
MCP6V26/7/8
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.3V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL = 10 kΩ to VL, CL = 60 pF and CS = GND (refer to Figure 1-5 and
Parameters
Sym
Min Typ
Max
Units
Conditions
Amplifier AC Response
Gain Bandwidth Product
GBWP —
2.0
MHz
Slew Rate
SR
1.0
V/s
Phase Margin
PM
65
°
G = +1
Amplifier Noise Response
Input Noise Voltage
Eni
—0.32
VP-P
f = 0.01 Hz to 1 Hz
Eni
—1.0
VP-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—50
nV/
√Hz f < 5 kHz
eni
—29
nV/
√Hz f = 100 kHz
Input Noise Current Density
ini
—0.6
fA/
√Hz
Amplifier Distortion (Note 1)
Intermodulation Distortion (AC)
IMD
40
VPK
VCM tone = 50 mVPK at 1 kHz,
GN = 1
Amplifier Step Response
Start Up Time
tSTR
75
s
G = +1, VOS within 50 V of its final value
Offset Correction Settling Time
tSTL
150
s
G = +1, VIN step of 2V,
VOS within 50 V of its final value
Output Overdrive Recovery Time
tODR
45
s
G = -100, ±0.5V input overdrive to VDD/2,
VIN 50% point to VOUT 90% point
Note 1:
These parameters were characterized using the circuit in Figure 1-7. In Figure 2-37 and Figure 2-38, there
is an IMD tone at DC, a residual tone at 1 kHz, other IMD tones and clock tones.
2:
High gains behave differently; see Section 4.3.3, Offset at Power Up.
3:
tODR includes some uncertainty due to clock edge timing.
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