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參數(shù)資料
型號(hào)： MCP6V11T-E/OT
廠商： Microchip Technology
文件頁(yè)數(shù)： 23/40頁(yè)
文件大小： 0K
描述： IC OPAMP SGL ZERO DRIFT SOT23-5
標(biāo)準(zhǔn)包裝： 1
放大器類型： 零漂移
電路數(shù)： 1
輸出類型： 滿擺幅
轉(zhuǎn)換速率： 0.03 V/µs
增益帶寬積： 80kHz
電流 - 輸入偏壓： 5pA
電壓 - 輸入偏移： 8µV
電流 - 電源： 7.5µA
電流 - 輸出 / 通道： 17mA
電壓 - 電源，單路/雙路(±)： 1.6 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： SC-74A，SOT-753
供應(yīng)商設(shè)備封裝： SOT-23-5
包裝： 標(biāo)準(zhǔn)包裝
其它名稱： MCP6V11T-E/OTDKR
2012 Microchip Technology Inc.
DS25124A-page 3
MCP6V11/1U
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings
VDD –VSS .................................................................................................................................................................6.5V
Current at Input Pins ..............................................................................................................................................±2 mA
Analog Inputs (VIN+ and VIN–) (Note 1) .....................................................................................VSS – 1.0V to VDD+1.0V
All other Inputs and Outputs .......................................................................................................VSS – 0.3V to VDD+0.3V
Difference Input voltage .................................................................................................................................|VDD –VSS|
Output Short Circuit Current ........................................................................................................................... Continuous
Current at Output and Supply Pins ......................................................................................................................±30 mA
Storage Temperature .............................................................................................................................-65°C to +150°C
Maximum Junction Temperature .......................................................................................................................... +150°C
ESD protection on all pins (HBM, CDM, MM)
........................................................................................... ≥ 2kV, 1.5kV, 400V
Note 1:
1.2
Specifications
Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, TA = +25°C, VDD = +1.6V to +5.5V, VSS = GND,
VCM = VDD/3,VOUT =VDD/2, VL =VDD/2, RL = 100 k to VL and CL = 20 pF (refer to Figure 1-4 and Figure 1-5).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Offset
Input Offset Voltage
VOS
-8
—
+8
V
TA = +25°C
Input Offset Voltage Drift with
Temperature (Linear Temp. Co.)
TC1
-50
—
+50
nV/°C TA = -40 to +125°C
Input Offset Voltage Quadratic
Temp. Co.
TC2
—±0.08
—
nV/°C2 TA = -40 to +125°C
Power Supply Rejection
PSRR
118
135
—
dB
Input Bias Current and Impedance
Input Bias Current
IB
—+5
—
pA
Input Bias Current across Temperature
IB
—+17
—
pA
TA = +85°C
IB
0+2.9
+5
nA
TA = +125°C
Input Offset Current
IOS
—±50
—
pA
Input Offset Current across Temperature
IOS
—±80
—
pA
TA = +85°C
IOS
-1
±0.4
+1
nA
TA = +125°C
Common Mode Input Impedance
ZCM
—1013||6
—
||pF
Differential Input Impedance
ZDIFF
—1013||6
—
||pF
Note 1:
For Design Guidance only; not tested.
2:
Figure 2-18 shows how VCML and VCMH changed across temperature for the first production lot.
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