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參數(shù)資料
型號(hào): MCP6N11T-005E/MNY
廠商: Microchip Technology
文件頁(yè)數(shù): 48/50頁(yè)
文件大?。?/td> 0K
描述: IC AMP INSTR RRIO 2.5MHZ 8TDFN
標(biāo)準(zhǔn)包裝: 1
放大器類(lèi)型: 儀表
電路數(shù): 1
輸出類(lèi)型: 滿(mǎn)擺幅
轉(zhuǎn)換速率: 9 V/µs
增益帶寬積: 2.5MHz
電流 - 輸入偏壓: 10pA
電壓 - 輸入偏移: 850µV
電流 - 電源: 800µA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-WFDFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 8-TDFN(2x3)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱(chēng): MCP6N11T-005E/MNYDKR
2011 Microchip Technology Inc.
DS25073A-page 7
MCP6N11
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = 25°C, VDD = 1.8V to 5.5V, VSS = GND, EN/CAL =VDD,
VCM = VDD/2, VDM =0V, VREF =VDD/2, VL =VDD/2, RL =10kΩ to VL, CL = 60 pF and GDM =GMIN;
Parameters
Sym
Min
Typ
Max
Units GMIN
Conditions
EN/CAL Low Specifications
EN/CAL Logic
Threshold, Low
VIL
VSS
—0.2 VDD
Vall
EN/CAL Input Current,
Low
IENL
-0.1
nA
EN/CAL = 0V
GND Current
ISS
-7
-2.5
A
EN/CAL = 0V, VDD =5.5V
Amplifier Output Leakage IO(LEAK)
10
nA
EN/CAL = 0V
EN/CAL High Specifications
EN/CAL Logic
Threshold, High
VIH
0.8 VDD
VDD
Vall
EN/CAL Input Current,
High
IENH
-0.01
nA
EN/CAL = VDD
EN/CAL Dynamic Specifications
EN/CAL Input Hysteresis
VHYST
0.2
Vall
EN/CAL Low to Amplifier
Output High-Z Turn-off
Time
tOFF
3
10
s
EN/CAL = 0.2VDD to VOUT = 0.1(VDD/2),
VDMGDM = 1 V, VL =0V
EN/CAL High to
Amplifier Output
On Time
tON
12
20
28
ms
EN/CAL = 0.8VDD to VOUT = 0.9(VDD/2),
VDMGDM = 1 V, VL =0V
EN/CAL Low to
EN/CAL High low time
tENLH
100
s
Minimum time before externally
releasing EN/CAL (Note 1)
Amplifier On to
EN/CAL Low Setup Time
tENOL
—100
s
POR Dynamic Specifications
VDD ↓ to Output Off
tPHL
—10
s
all
VL =0V, VDD = 1.8V to
VPRL –0.1V step,
90% of VOUT change
VDD ↑ to Output On
tPLH
140
250
360
ms
VL =0V, VDD = 0V to VPRH +0.1V step,
90% of VOUT change
Note 1:
For design guidance only; not tested.
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = 1.8V to 5.5V, VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-SOIC
θJA
—150
°C/W
Thermal Resistance, 8L-TDFN (2×3)
θJA
—53—
°C/W
Note 1:
Operation must not cause TJ to exceed the Absolute Maximum Junction Temperature specification (+150°C).
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