Maximum Output Voltage Swing VO" />
參數(shù)資料
型號(hào): MCP660T-E/SL
廠商: Microchip Technology
文件頁(yè)數(shù): 34/68頁(yè)
文件大?。?/td> 0K
描述: IC OPAMP TRIPLE 60MHZ 14SOIC
標(biāo)準(zhǔn)包裝: 2,600
放大器類型: 通用
電路數(shù): 3
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 32 V/µs
增益帶寬積: 60MHz
電流 - 輸入偏壓: 6pA
電壓 - 輸入偏移: 1800µV
電流 - 電源: 6mA
電流 - 輸出 / 通道: 80mA
電壓 - 電源,單路/雙路(±): 2.5 V ~ 5.5 V,±1.25 V ~ 2.75 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOICN
包裝: 帶卷 (TR)
MCP660/1/2/3/4/5/9
DS22194D-page 4
2009-2012 Microchip Technology Inc.
Output
Maximum Output Voltage Swing VOL, VOH VSS + 25
VDD 25
mV
VDD = 2.5V, G = +2,
0.5V Input Overdrive
VOL, VOH VSS + 50
VDD 50
mV
VDD = 5.5V, G = +2,
0.5V Input Overdrive
Output Short Circuit Current
ISC
±45
±90
±145
mA
VDD = 2.5V (Note 2)
ISC
±40
±80
±150
mA
VDD = 5.5V (Note 2)
Power Supply
Supply Voltage
VDD
2.5
5.5
V
Quiescent Current per Amplifier
IQ
3
6
9
mA
No Load Current
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 1 k to VL, CL = 20 pF and CS = VSS (refer to Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
60
MHz
Phase Margin
PM
65
°
G = +1
Open Loop Output Impedance
ROUT
—10
AC Distortion
Total Harmonic Distortion plus Noise
THD+N
0.003
%
G = +1, VOUT = 2VP-P, f = 1 kHz,
VDD = 5.5V, BW = 80 kHz
Differential Gain, Positive Video
DG
0.3
%
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V, DC VIN = 0V to
0.7V
Differential Gain, Negative Video
DG
0.3
%
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V,
DC VIN = 0V to -0.7V
Differential Phase, Positive Video
DP
0.3
°
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V,
DC VIN = 0V to 0.7V
Differential Phase, Negative Video
DP
0.9
°
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V,
DC VIN = 0V to -0.7V
Step Response
Rise Time, 10% to 90%
tr
5
ns
G = +1, VOUT = 100 mVP-P
Slew Rate
SR
32
V/s
G = +1
Noise
Input Noise Voltage
Eni
—14
VP-P f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—6.8
nV/
Hz f = 1 MHz
Input Noise Current Density
ini
4—
fA/
Hz f = 1 kHz
Note 1:
These specifications are described in detail in Section 4.3 “Distortion”. (NTSC refers to a National
Television Standards Committee signal.)
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT VDD/2, VL = VDD/2, RL = 1 k to VL and CS = VSS (refer to Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
See Figure 2-5 for temperature effects.
2:
The ISC specifications are for design guidance only; they are not tested.
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