參數(shù)資料
型號(hào)： MCP6021R
廠商： Microchip Technology Inc.
英文描述： Rail-to-Rail Input/Output, 10 MHz Op Amps
中文描述： 軌到軌輸入/輸出，10兆赫運(yùn)算放大器
文件頁(yè)數(shù)： 23/34頁(yè)
文件大?。?/td> 461K
代理商： MCP6021R
2006 Microchip Technology Inc.
DS21685C-page 3
MCP6021/1R/2/3/4
AC ELECTRICAL CHARACTERISTICS
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL =10 kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
10
—
MHz
Phase Margin at Unity-Gain
PM
—
65
—
°
G = +1
Settling Time, 0.2%
tSETTLE
—
250
—
ns
G = +1, VOUT = 100 mVp-p
Slew Rate
SR
—
7.0
—
V/s
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V
THD+N
—
0.00053
—
%
VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V, RL = 600Ω
THD+N
—
0.00064
—
%
VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V
THD+N
—
0.0014
—
%
VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +10 V/V
THD+N
—
0.0009
—
%
VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +100 V/V
THD+N
—
0.005
—
%
VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
Noise
Input Noise Voltage
Eni
—
2.9
—
Vp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—8.7
—
nV/
√Hz f = 10 kHz
Input Noise Current Density
ini
—3—
fA/
√Hz f = 1 kHz
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL =10 kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—0.2 VDD
V
CS Input Current, Low
ICSL
-1.0
0.01
—
A
CS = VSS
CS High Specifications
CS Logic Threshold, High
VIH
0.8 VDD
—VDD
V
CS Input Current, High
ICSH
—0.01
2.0
A
CS = VDD
GND Current
ISS
-2
-0.05
—
A
CS = VDD
Amplifier Output Leakage
IO(LEAK)
—0.01
—
A
CS = VDD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
tON
—
2
10
s
G = +1, VIN = VSS,
CS = 0.2VDD to VOUT = 0.45VDD time
CS High to Amplifier Output High-Z Time
tOFF
—
0.01
—
s
G = +1, VIN = VSS,
CS = 0.8VDD to VOUT = 0.05VDD time
Hysteresis
VHYST
—0.6
—
V
VDD = 5.0V, Internal Switch
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