參數(shù)資料
型號： MCP4441-104E/ST
廠商： Microchip Technology
文件頁數(shù)： 92/100頁
文件大小： 0K
描述： IC DGTL POT 129TAPS QUAD 20TSSOP
標準包裝： 74
接片： 129
電阻（歐姆）： 100k
電路數(shù)： 4
溫度系數(shù)： 標準值 150 ppm/°C
存儲器類型： 非易失
接口： I²C（設備位址）
電源電壓： 2.7 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 20-TSSOP（0.173"，4.40mm 寬）
供應商設備封裝： 20-TSSOP
包裝： 管件
2010 Microchip Technology Inc.
DS22265A-page 91
MCP444X/446X
APPENDIX B:
CHARACTERIZATION
DATA ANALYSIS
Some designers may want to understand the device
operational characteristics outside of the specified
operating conditions of the device.
Applications where the knowledge of the resistor
network characteristics could be useful include battery
powered devices and applications that experience
brown-out conditions.
In battery applications, the application voltage decays
over time until new batteries are installed. As the
voltage decays, the system will continue to operate. At
some voltage level, the application will be below its
specified operating voltage range. This is dependent
on the individual components used in the design. It is
still useful to understand the device characteristics to
expect when this low-voltage range is encountered.
Unlike a microcontroller, which can use an external
supervisor device to force the controller into the Reset
state, a digital potentiometer’s resistance characteristic
is not specified. But understanding the operational
characteristics can be important in the design of the
applications circuit for this low-voltage condition.
Other
application
system
scenarios
where
understanding the low-voltage characteristics of the
resistor network could be important is for system brown
out conditions.
For the MCP444X/446X devices, the analog operation
is specified at a minimum of 2.7V. Device testing has
Terminal A connected to the device VDD (for the
potentiometer configuration only) and Terminal B
connected to VSS.
B.1
Low-Voltage Operation
This
appendix
gives
an
overview
of
CMOS
semiconductor characteristics at lower voltages. This is
important
so
that
the
1.8V
resistor
network
characterization graphs of the MCP444X/446X devices
can be better understood.
For this discussion, we will use the 5 k
Ω device data.
This data was chosen since the variations of wiper
resistance have much greater implications for devices
with smaller RAB resistances.
Figure B-1 shows the worst case RBW error from the
average RBW as a percentage, while Figure B-2 shows
the RBW resistance versus the wiper code graph.
Non-linear behavior occurs at approximately wiper
code 160. This is better shown in Figure B-2, where the
RBW resistance changes from a linear slope. This
change is due to the change in the wiper resistance.
FIGURE B-1:
1.8V Worst Case RBW Error
from Average RBW (RBW0-RBW3) vs. Wiper Code
and Temperature (VDD = 1.8V, IW = 190 A).
FIGURE B-2:
RBW vs. Wiper Code And
Temperature (VDD = 1.8V, IW = 190 A).
-7.00%
-6.00%
-5.00%
-4.00%
-3.00%
-2.00%
-1.00%
0.00%
1.00%
2.00%
0
32
64
96
128
160
192
224
256
Wiper Code
Error
%
-40C
+25C
+85C
+125C
0
1000
2000
3000
4000
5000
6000
7000
0
32
64
96
128
160
192
224
256
Wiper Code
Resistance
()
-40C
+25C
+85C
+125C
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