參數(shù)資料
型號(hào): MCP4262T-103E/MF
廠商: Microchip Technology
文件頁(yè)數(shù): 46/88頁(yè)
文件大?。?/td> 0K
描述: IC POT DGTL DUAL 10K RHEO 10DFN
標(biāo)準(zhǔn)包裝: 3,300
系列: WiperLock™
接片: 257
電阻(歐姆): 10k
電路數(shù): 2
溫度系數(shù): 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類(lèi)型: 非易失
接口: 4 線 SPI(芯片選擇)
電源電壓: 2.7 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 10-VFDFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 10-DFN-EP(3x3)
包裝: 帶卷 (TR)
MCP414X/416X/424X/426X
DS22059B-page 50
2008 Microchip Technology Inc.
7.5.3
CONTINUOUS WRITES TO
VOLATILE MEMORY
Continuous writes are possible only when writing to the
volatile memory registers (address 00h, 01h, and 04h).
Figure 7-3 shows the sequence for three continuous
writes. The writes do not need to be to the same volatile
memory address.
7.5.4
CONTINUOUS WRITES TO
NON-VOLATILE MEMORY
Continuous writes to non-volatile memory are not
allowed, and attempts to do so will result in a command
error (CMDERR) condition.
FIGURE 7-3:
Continuous Write Sequence (Volatile Memory only).
A
D
3
A
D
2
A
D
1
A
D
0
00
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
111111 1* 111111111
A
D
3
A
D
2
A
D
1
A
D
0
00
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
111111 1* 111111111
A
D
3
A
D
2
A
D
1
A
D
0
00
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
111111 1* 111111111
COMMAND BYTE
DATA BYTE
SDI
SDO
Note 1:
If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
driven low until the CS pin is driven inactive (VIH).
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