參數(shù)資料
型號(hào)： MCP4261T-503E/ML
廠商： Microchip Technology
文件頁數(shù)： 53/88頁
文件大?。?/td> 0K
描述： IC DGTL POT 50K 2CH 16QFN
標(biāo)準(zhǔn)包裝： 3,300
系列： WiperLock™
接片： 257
電阻（歐姆）： 50k
電路數(shù)： 2
溫度系數(shù)： 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類型： 非易失
接口： 4 線 SPI（芯片選擇）
電源電壓： 2.7 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 16-VQFN 裸露焊盤
供應(yīng)商設(shè)備封裝： 16-QFN-EP（4x4）
包裝： 帶卷 (TR)
其它名稱： MCP4261T-503-E/ML
MCP4261T-503-E/MLTR
MCP4261T-503-E/MLTR-ND
MCP4261T-503E/MLTR
2008 Microchip Technology Inc.
DS22059B-page 57
MCP414X/416X/424X/426X
7.9
Modify Write Protect or WiperLock
Technology (High Voltage)
Enable and Disable
This command is a special case of the High Voltage
and High Voltage Increment Wiper
commands to the non-volatile memory locations 02h,
03h, and 0Fh. This command is used to enable or
disable either the software Write Protect, wiper 0
WiperLock Technology, or wiper 1 WiperLock Technol-
ogy. Table 7-6 shows the memory addresses, the High
Voltage command and the result of those commands
on the non-volatile WP, WL0, 0r WL1 bits. The format
of the command is shown in Figure 7-8 (Enable) or
Figure 7-6 (Disable).
7.9.1
SINGLE ENABLE WRITE PROTECT
OR WIPERLOCK TECHNOLOGY
(HIGH VOLTAGE)
through
show
possible
waveforms for a single Modify Write Protect or
WiperLock Technology command.
A Modify Write Protect or WiperLock Technology
Command will only start an EEPROM write cycle (twc)
after a properly formatted Command (8-clocks) has
been received and the CS pin transitions to the inactive
state (VIH).
After the CS pin is driven inactive (VIH), the serial
interface may immediately be re-enabled by driving the
CS pin to the active state (VILor VIHH).
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (twc) completes. This
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
TABLE 7-6:
ADDRESS MAP TO MODIFY WRITE PROTECT AND WIPERLOCK TECHNOLOGY
Memory
Address
Command’s and Result
High Voltage Decrement Wiper
High Voltage Increment Wiper
00h
Wiper 0 register is decremented
Wiper 0 register is incremented
01h
Wiper 1 register is decremented
Wiper 1 register is incremented
02h
WL0 is enabled
WL0 is disabled
03h
WL1 is enabled
WL1 is disabled
04h (1)
TCON register not changed, CMDERR bit is set TCON register not changed, CMDERR bit is set
05h - 0Eh (1)
Reserved
0Fh
WP is enabled
WP is disabled
Note 1:
Reserved addresses:
Increment or Decrement commands are invalid for these addresses.
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