參數(shù)資料
型號(hào): MCP4161-103E/MF
廠商: Microchip Technology
文件頁數(shù): 22/88頁
文件大?。?/td> 0K
描述: IC POT DGTL SNGL 10K SPI 8DFN
標(biāo)準(zhǔn)包裝: 120
系列: WiperLock™
接片: 257
電阻(歐姆): 10k
電路數(shù): 1
溫度系數(shù): 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類型: 易失
接口: 3 線 SPI(芯片選擇)
電源電壓: 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-VDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 8-DFN-EP(3x3)
包裝: 管件
2008 Microchip Technology Inc.
DS22059B-page 29
MCP414X/416X/424X/426X
4.0
FUNCTIONAL OVERVIEW
This Data Sheet covers a family of thirty-two Digital
Potentiometer and Rheostat devices that will be
referred to as MCP4XXX. The MCP4XX1 devices are
the Potentiometer configuration, while the MCP4XX2
devices are the Rheostat configuration.
As the Device Block Diagram shows, there are four
main functional blocks. These are:
The POR/BOR operation and the Memory Map are
discussed in this section and the Resistor Network and
SPI operation are described in their own sections. The
commands are discussed in
4.1
POR/BOR Operation
The Power-on Reset is the case where the device is
having power applied to it from VSS. The Brown-out
Reset occurs when a device had power applied to it,
and that power (voltage) drops below the specified
range.
The devices RAM retention voltage (VRAM) is lower
than the POR/BOR voltage trip point (VPOR/VBOR). The
maximum VPOR/VBOR voltage is less then 1.8V.
When VPOR/VBOR < VDD < 2.7V, the electrical
performance
may
not
meet
the
data
sheet
specifications. In this region, the device is capable of
reading and writing to its EEPROM and incrementing,
decrementing, reading and writing to its volatile
memory if the proper serial command is executed.
4.1.1
POWER-ON RESET
When the device powers up, the device VDD will cross
the VPOR/VBOR voltage. Once the VDD voltage crosses
the VPOR/VBOR voltage the following happens:
Volatile wiper register is loaded with value in the
corresponding non-volatile wiper register
The TCON register is loaded it’s default value
The device is capable of digital operation
4.1.2
BROWN-OUT RESET
When the device powers down, the device VDD will
cross the VPOR/VBOR voltage.
Once the VDD voltage decreases below the VPOR/VBOR
voltage the following happens:
Serial Interface is disabled
EEPROM Writes are disabled
If the VDD voltage decreases below the VRAM voltage
the following happens:
Volatile wiper registers may become corrupted
TCON register may become corrupted
As the voltage recovers above the VPOR/VBOR voltage
Serial commands not completed due to a brown-out
condition may cause the memory location (volatile and
non-volatile) to become corrupted.
4.2
Memory Map
The device memory is 16 locations that are 9-bits wide
(16x9 bits). This memory space contains both volatile
and non-volatile locations (see Table 4-1).
TABLE 4-1:
MEMORY MAP
Address
Function
Memory Type
00h
Volatile Wiper 0
RAM
01h
Volatile Wiper 1
RAM
02h
Non-Volatile Wiper 0
EEPROM
03h
Non-Volatile Wiper 1
EEPROM
04h
Volatile TCON Register
RAM
05h
Status Register
RAM
06h
Data EEPROM
EEPROM
07h
Data EEPROM
EEPROM
08h
Data EEPROM
EEPROM
09h
Data EEPROM
EEPROM
0Ah
Data EEPROM
EEPROM
0Bh
Data EEPROM
EEPROM
0Ch
Data EEPROM
EEPROM
0Dh
Data EEPROM
EEPROM
0Eh
Data EEPROM
EEPROM
0Fh
Data EEPROM
EEPROM
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