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2003 Microchip Technology Inc.
DS21805A-page 3
MCP3021
TEMPERATURE SPECIFICATIONS
Input leakage current
ILI
-1
—
+1
A
VIN = VSS to VDD
Output leakage current
ILO
-1
—
+1
A
VOUT = VSS to VDD
Pin capacitance
(all inputs/outputs)
CIN,
COUT
——
10
pF
TAMB = 25°C, f = 1 MHz;
Bus Capacitance
CB
—
400
pF
SDA drive low, 0.4V
Power Requirements
Operating Voltage
VDD
2.7
—
5.5
V
Conversion Current
IDD
—175
250
A
Standby Current
IDDS
—
0.005
1
A
SDA, SCL = VDD
Active bus current
IDDA
——
120
A
Conversion Rate
Conversion Time
tCONV
—8.96
—
s
Analog Input Acquisition Time
tACQ
—1.12
—
s
Sample Rate
fSAMP
——
22.3
ksps
Electrical Characteristics: All parameters apply across the operating voltage range.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Temperature Ranges
Extended Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT23A
θJA
—
256
—
°C/W
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 5.0V, VSS = GND, RPU = 2 k
TA = -40°C to +85°C, I
2C Fast Mode Timing: f
SCL = 400 kHz (Note 3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
Sample time is the time between conversions after the address byte has been sent to the converter. Refer
to Figure 5-6.
2:
This parameter is periodically sampled and not 100% tested.
3:
RPU = Pull-up resistor on SDA and SCL.
4:
SDA and SCL = VSS to VDD at 400 kHz.
5:
tACQ and tCONV are dependent on internal oscillator timing. See Figure 5-5 and Figure 5-6 for relation to
SCL.