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參數(shù)資料
| 型號： | MCP1726 |
| 廠商： | Microchip Technology Inc. |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | 1A, Low Voltage, Low Quiescent Current LDO Regulator |
| 中文描述： | 1A中，低電壓，低靜態(tài)電流LDO穩(wěn)壓器 |
| 文件頁數(shù)： | 19/30頁 |
| 文件大?。?/td> | 431K |
| 代理商： | MCP1726 |
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2005 Microchip Technology Inc.
DS21936B-page 19
MCP1726
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum inter-
nal power dissipation.
EQUATION 5-4:
EQUATION 5-5:
=
EQUATION 5-6:
5.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power dissi-
pation as a result of ground current is small enough to
be neglected.
5.3.1
POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The ther-
mal resistance from junction to ambient (R
θ
JA
) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7 “High
Effective Thermal Conductivity Test Board for Leaded
Surface-Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an Appli-
cation” (DS00792), for more information regarding this
subject.
P
D MAX
)
T
------------------------–
T
R
θ
JA
)
(
)
=
P
D(MAX)
= Maximum device power
dissipation
T
J(MAX)
= maximum continuous junction
temperature
T
A(MAX)
= maximum ambient temperature
R
θ
JA
= Thermal resistance from junction
to ambient
T
J RISE
)
P
D MAX
)
R
θ
JA
×
T
J(RISE)
= Rise in device junction
temperature over the ambient
temperature
P
D(MAX)
= Maximum device power
dissipation
R
θ
JA
= Thermal resistance from junction
to ambient
T
J
T
J RISE
)
T
A
+
=
T
J
= Junction temperature
T
J(RISE)
= Rise in device junction
temperature over the ambient
temperature
T
A
= Ambient temperature
Package
Package Type = 3X3DFN
Input Voltage
V
IN
= 3.3V ± 10%
LDO Output Voltage and Current
V
OUT
= 2.5V
I
OUT
= 1.0A
Maximum Ambient Temperature
T
A(MAX)
= 70°C
Internal Power Dissipation
P
LDO(MAX)
= (V
IN(MAX)
– V
OUT(MIN)
) x I
OUT(MAX)
P
LDO
= (3.3V x 1.1) – (0.975 x 2.5V))
x 1.0A
P
LDO
= 1.192 Watts
T
J(RISE)
= P
TOTAL
x R
θ
JA
T
JRISE
= 1.192 W x 41.0
°
C/W
T
JRISE
= 48.8
°
C
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| MCP1726-0802E/MF | 功能描述:低壓差穩(wěn)壓器 - LDO 1A .8V Vout Extended Temp RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動電壓（最大值）:307 mV 輸出電流:1 A 負載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MCP1726-0802E/SN | 功能描述:低壓差穩(wěn)壓器 - LDO 1A .8V Vout Extended Temp RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動電壓（最大值）:307 mV 輸出電流:1 A 負載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MCP1726-1202E/MF | 功能描述:低壓差穩(wěn)壓器 - LDO 1A 1.2V Vout Extended Temp RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動電壓（最大值）:307 mV 輸出電流:1 A 負載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MCP1726-1202E/SN | 功能描述:低壓差穩(wěn)壓器 - LDO 1A 1.2V Vout Extended Temp RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動電壓（最大值）:307 mV 輸出電流:1 A 負載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MCP1726-1802E/MF | 功能描述:低壓差穩(wěn)壓器 - LDO 1A 1.8V Vout Extended Temp RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動電壓（最大值）:307 mV 輸出電流:1 A 負載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:VQFN-20 |
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