
MCP1702
DS22008B-page 4
2007 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS (NOTE 1)
Dropout Voltage
(Note 1, Note 5)
V
DROPOUT
—
330
650
mV
I
L
= 250 mA, V
R
= 5.0V
I
L
= 250 mA, 3.3V
≤
V
R
< 5.0V
I
L
= 250 mA, 2.8V
≤
V
R
< 3.3V
I
L
= 250 mA, 2.5V
≤
V
R
< 2.8V
V
R
< 2.5V, See Maximum Output
Current Parameter
—
525
725
mV
—
625
975
mV
—
750
1100
mV
—
—
—
mV
Output Delay Time
T
DELAY
—
1000
—
μs
V
IN
= 0V to 6V, V
OUT
= 90% V
R
R
L
= 50
Ω
resistive
I
L
= 50 mA, f = 1 kHz, C
OUT
= 1 μF
f = 100 Hz, C
OUT
= 1 μF, I
L
= 50 mA,
V
INAC
= 100 mV pk-pk, C
IN
= 0 μF,
V
R
= 1.2V
Output Noise
e
N
—
8
μV/(Hz)
1/2
Power Supply Ripple
Rejection Ratio
PSRR
—
44
—
dB
Thermal Shutdown Protection
The minimum V
IN
must meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
OUT(MAX)
+ V
DROPOUT(MAX)
.
2:
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
or V
IN
= 2.7V (whichever is greater); I
OUT
= 100 μA.
3:
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
Δ
Temperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7:
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
T
SD
—
150
—
°C
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
J
T
J
T
A
-40
+125
°C
Operating Temperature Range
-40
+125
°C
Storage Temperature Range
-65
+150
°C
Thermal Package Resistance
Thermal Resistance, 3L-SOT-23A
θ
JA
—
336
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
θ
JC
—
110
—
°C/W
Thermal Resistance, 3L-SOT-89
θ
JA
—
52
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
θ
JC
θ
JA
θ
JC
—
10
—
°C/W
Thermal Resistance, 3L-TO-92
—
131.9
—
°C/W
—
66.3
—
°C/W
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
,
Note 1
,
I
LOAD
= 100 μA, C
OUT
= 1 μF (X7R), C
IN
= 1 μF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
of -40°C to +125°C.
(Note 7)
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1: