參數(shù)資料
型號(hào)： MCP1700-3302ETO
廠商： Microchip Technology Inc.
元件分類(lèi)： 線性穩(wěn)壓
英文描述： Low Quiescent Current LDO
中文描述： 低靜態(tài)電流低壓降穩(wěn)壓器
文件頁(yè)數(shù)： 5/22頁(yè)
文件大?。?/td> 522K
代理商： MCP1700-3302ETO
2003 Microchip Technology Inc.
DS21826A-page 13
MCP1700
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
Typical Application
The MCP1700 is most commonly used as a voltage
regulator. It’s low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1700 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(1.6 A x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION
The
maximum
continuous
operating
junction
temperature specified for the MCP1700 is +125°C. To
estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
θJA). The thermal resistance from junction to
ambient for the SOT23 pin package is estimated at
230 °C/W.
EQUATION
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION
Package Type = SOT23
Input Voltage Range = 2.3V to 3.2V
VIN maximum = 3.2V
VOUT typical = 1.8V
IOUT = 150 mA maximum
MCP1700
GND
VOUT
VIN
CIN
1F Ceramic
COUT
1F Ceramic
VOUT
VIN
(2.3V to 3.2V)
1.8V
IOUT
150 mA
PLDO
VIN MAX)
() VOUT MIN
()
–
() IOUT MAX)
()
×
=
PLDO = LDO Pass device internal power dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
TJMAX
()
PTOTAL RθJA
×
TAMAX
+
=
TJ(MAX) = Maximum continuous junction
temperature.
PTOTAL = Total device power dissipation.
R
θJA = Thermal resistance from junction to ambient.
TAMAX = Maximum ambient temperature.
PDMAX
()
TJMAX
()
TAMAX
()
–
()
R
θJA
---------------------------------------------------
=
PD(MAX) = Maximum device power dissipation.
TJ(MAX) = Maximum continuous junction
temperature.
TA(MAX) = Maximum ambient temperature.
R
θJA = Thermal resistance from junction to ambient.
TJRISE
()
PDMAX
()
R
θJA
×
=
TJ(RISE) = Rise in device junction temperature over
the ambient temperature.
PTOTAL = Maximum device power dissipation.
R
θJA = Thermal resistance from junction to ambient.
TJ
TJRISE
()
TA
+
=
TJ = Junction Temperature.
TJ(RISE) = Rise in device junction temperature over
the ambient temperature.
TA = Ambient temperature.
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