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參數(shù)資料
| 型號： | MCM69P618CTQ7R |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 64K X 18 CACHE SRAM, 7 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 205K |
| 代理商： | MCM69P618CTQ7R |
MCM69P618C
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VIL
VIH
3.135
3.3
3.6
V
Input Low Voltage
– 0.5*
—
0.8
V
Input High Voltage
2
—
5.5**
V
*VIL
≥
– 2 V for t
≤
tKHKH/2.
**VIH
≤
6 V for t
≤
tKHKH/2.
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
Input Leakage Current (0 V
≤
Vin
≤
VDD) (Excluding LBO)
Output Leakage Current (0 V
≤
Vin
≤
VDD)
AC Supply Current (Device Selected, All Outputs Open,
Cycle Time
≥
tKHKH min)
Ilkg(I)
Ilkg(O)
IDDA
—
±
1
μ
A
—
±
1
μ
A
MCM69P618C–4
MCM69P618C–4.5
MCM69P618C–5
MCM69P618C–6
MCM69P618C–7
—
300
295
275
260
255
mA
1, 2, 3
CMOS Standby Supply Current (Deselected, Clock (K
)
Cycle Time
≥
tKHKH, All Inputs Toggling at CMOS
Levels Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V)
MCM69P618C–4
MCM69P618C–4.5
MCM69P618C–5
MCM69P618C–6
MCM69P618C–7
ISB1
—
160
155
130
110
105
mA
4
Clock Running Supply Current (Deselected, Clock (K
)
Cycle Time
≥
tKHKH, All Other Inputs Held to Static
CMOS Levels Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V)
MCM69P618C–4
MCM69P618C–4.5
MCM69P618C–5
MCM69P618C–6
MCM69P618C–7
ISB2
—
50
50
45
40
40
mA
4
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = – 4 mA)
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
4. Device in Deselected mode as defined by the Truth Table.
VOL
VOH
—
0.4
V
2.4
—
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
CI/O
—
4
6
pF
Input/Output Capacitance
—
7
9
pF
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