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參數(shù)資料
| 型號(hào)： | MCM321024SG20 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 32 Bit Fast Static RAM Module |
| 中文描述： | 4M X 8 MULTI DEVICE SRAM MODULE, 20 ns, SMA72 |
| 封裝： | SIMM-72 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 80K |
| 代理商： | MCM321024SG20 |
MCM321024
3
MOTOROLA FAST SRAM
TRUTH TABLE
Ex
G
W
Mode
VCC Current
ISB1 or ISB2
ICCA
ICCA
ICCA
Output
Cycle
H
X
X
Not Selected
High–Z
—
L
H
H
Read
High–Z
—
L
L
H
Read
Dout
Din
Read Cycle
L
X
L
Write
Write Cycle
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
Vin, Vout
Iout
PD
Tbias
TA
Tstg
– 0.5 to 7.0
V
Voltage Relative to VSS
Output Current (per I/O)
– 0.5 to VCC + 0.5
±
30
V
mA
Power Dissipation
8.0
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
0 to + 70
°
C
Storage Temperatrue
– 25 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are ex-
ceeded. Functional operation should be restricted to RECOMMENDED OPERAT-
ING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
4.5
5.0
5.5
V
Input High Voltage
2.2
—
VCC+0.3*
0.8
V
Input Low Voltage
– 0.5**
—
V
*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width
≤
20 ns)
**VIL (min) = – 3.0 V ac (pulse width
≤
20 ns)
DC CHARACTERISTICS
Parameter
Symbol
Min
Typ
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (G, Ex = VIH, Vout = 0 to VCC)
AC Active Supply Current (G, Ex = VIL, Iout = 0 mA, MCM321024–20: tAVAV = 20 ns
Cycle time
≥
tAVAV min)
Ilkg(I)
Ilkg(O)
ICCA
—
—
±
8
μ
A
—
—
±
8
μ
A
MCM321024–25: tAVAV = 25 ns
—
—
1440
1320
1520
1400
mA
AC Standby Current (Ex = VIH, Cycle time
≥
tAVAV min)
CMOS Standby Current (Ex
≥
VCC – 0.2 V, All Inputs
≥
VCC – 0.2 V or
≤
0.2 V)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
NOTE: Good decoupling of the local power supply should always be used.
ISB1
ISB2
VOL
VOH
—
400
480
mA
—
80
120
mA
—
—
0.4
V
2.4
—
—
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Characteristic
Symbol
Typ
Max
Unit
Input Capacitance
(All pins except DQ0 – DQ31, W, G, and E1 – E4)
E1 – E4
W, G
Cin
32
10
40
48
14
64
pF
Input/Output Capacitance
(DQ0 – DQ31)
Cout
8
9
pF
The devices on this module contain circuitry
to protect the inputs against damage due to
high static voltages or electric fields; however,
it is advised that normal precautions be taken
to avoid application of any voltage higher than
maximum rated voltages to these high imped-
ance circuits.
These CMOS memory circuits have been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The module is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MCM321024SG25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 32 Bit Fast Static RAM Module |
| MCM32200 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:2M x 32 Bit Dynamic Random Access Memory Module |
| MCM32200S10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:2M x 32 Bit Dynamic Random Access Memory Module |
| MCM32200S80 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:2M x 32 Bit Dynamic Random Access Memory Module |
| MCM32200SG10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:2M x 32 Bit Dynamic Random Access Memory Module |
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